HGTG10N120BND

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Overview of HGTG10N120BND

Part NumberHGTG10N120BND
Manufactureronsemi
DescriptionIGBT NPT 1200V 35A TO247-3
DatasheetsDownload HGTG10N120BND Datasheet PDFPDF Icon
Price for HGTG10N120BND

Specification of HGTG10N120BND

Status
Obsolete
Package
Bulk,Tube
Supplier
Rochester Electronics, LLC,onsemi
IGBT Type
NPT
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
35 A
Current - Collector Pulsed (Icm)
80 A
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 10A
Power - Max
298 W
Switching Energy
850J (on), 800J (off)
Input Type
Standard
Gate Charge
100 nC
Td (on/off) @ 25C
23ns/165ns
Test Condition
960V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr)
70 ns
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247-3

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